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| Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SPT5006 and SPT5008 Series 10 AMPS 100 Volts High Power - High Speed NPN Transistors * * * * * * * * Features: Radiation Tolerant Fast Switching, 100 ns Maximum td High Frequency, fT> 30MHz BVCEO 80 Volts Minimum High Linear Gain, Low Saturation Voltage 200oC Operating Temperature Designed for Complementary Use With SPT5007 and SPT5009 TX, TXV, S-Level Screening Available. Consult Factory. Symbol VCEO VCBO VEBO IC IB PD T J & TSTG R0JC DESIGNER'S DATA SHEET Part Number / Ordering Information 1/ SPT5006 __ __ __ SPT5008 __ __ __ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Lead Bend 3/ 4/ __ = Straight Leads UB = Up Bend DB = Down Bend Package 3/ /61 = TO-61 /3 = TO-3 M = TO-254 S1 = SMD1 Maximum Ratings Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 50C Derate Above 50C Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) Value 80 100 6 10 3 100 0.667 -65 to +200 1.5 Units Volts Volts Volts Amps Amps Watts W/C C C/W TO-61 (/61) TO-3(/3) TO-254 (M) SMD1 (S1) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0113A DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SPT5006 and SPT5008 Series Symbol (IC = 200 mA) (IC = 200 A) (IE = 200 A) (VCE = 40 V) (VCE = 60 V) (VCE = 100 V) (VCE = 60 V, VBE = 2 V, TC = 150C) (VEB = 4 V) (VEB = 5.5 V) (IC = 100 mA, VCE = 5 V) 2N5006 2N5008 (IC = 5 A, VCE = 5 V) 2N5006 2N5008 (IC = 10 A, VCE = 5 V)2N5006 2N5008 (IC = 5 A, IB = 500 mA) (IC = 10 A, IB = 500 mA) (IC = 5 A, IB = 500 mA) (IC = 10 A, IB = 1 A) (VCE = 5 V, IC = 5 A) (VCE = 5 V, IC = 0.5 A, f = 20 MHz)2N5006 Electrical Characteristics Collector - Emitter Blocking Voltage * Collector - Base Blocking Voltage Emitter - Base Blocking Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain * Min 80 100 6 -- -- -- -- -- 20 50 30 70 20 45 -- -- -- -- -- 30 40 -- Max -- -- -- 50 1.0 1.0 500 1.0 1.0 -- -- 90 200 -- -- 0.9 1.5 1.8 2.2 1.8 -- -- 275 100 100 2.0 200 Units Volts Volts Volts A A mA A A mA BVCEO BVCBO BVEBO ICEO ICES ICEX ICEX IEBO hFE Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Base - Emitter Voltage* Current Gain - Bandwidth Product VCE (SAT) VBE (SAT) VBE (ON) fT Cob t(on) t(off) td tr ts tf Volts Volts MHz pF ns ns s ns 2N5008 Output Capacitance Delay Time Rise Time Storage Time Fall Time NOTES: * Pulse Test: Pulse Width = 300sec, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening based on MIL-PRF-19500. Screening flows are available on request. 3/ For Package Outlines Contact Factory. VCB = 10 V, IE = 0 A, f = 1.0MHz (VCC = 40 V, IC = 2 A, VEB (OFF) = 3.0 V, IB1 = IB2 = 200 mA) (tp = 2s) -- -- -- -- 4/ Up and Down Bend Configurations are Available for `M' (TO-254) Packages Only. 5/ Unless Otherwise Specified, All Electrical Characteristics @25C. Available Part Numbers: SPT5006/61, SPT5006/3, SPT5006M, SPT5006MUB, SPT5006MDB, SPT5006S1, SPT5008/61, SPT5008/3, SPT5008M, SPT5008MUB, SPT5008MDB, SPT5008S1 PIN ASSIGNMENT (Standard) Package Collector Emitter TO-61 (/61) Pin 3 Pin 1 TO-3 (/3) Case Pin 2 TO-254 (M) Pin 1 Pin 2 SMD1(S1) Pin 2 Pin 1 Base Pin 2 Pin 3 Pin 3 Pin 3 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: TR0113A DOC |
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